BC556B

更新时间： 2024-02-17 01:03:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
6页	162K
描述
Amplifier Transistors(PNP Silicon)

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技术参数
数据手册

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BC556B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.1 A
配置：	Single	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.5 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	150 MHz	Base Number Matches：	1

BC556B 数据手册

Order this document

by BC556/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

557

556

–65

–80

558

–30

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

–45

–50

Vdc

–5.0

–100

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –2.0 mAdc, I = 0)

(BR)CEO

BC556

BC557

BC558

–65

–45

–30

—

Collector–Base Breakdown Voltage

(I = –100 µAdc)

(BR)CBO

BC556

BC557

BC558

–80

–50

–30

—

Emitter–Base Breakdown Voltage

(BR)EBO

(I = –100 Adc, I = 0)

BC556

BC557

BC558

–5.0

—

Collector–Emitter Leakage Current

CES

= –40 V)

= –20 V)

BC556

BC557

BC558

BC556

BC557

BC558

—

–2.0

—

–100

–4.0

CES

= –20 V, T = 125°C)

µA

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6

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