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BAV70-TP-HF PDF预览

BAV70-TP-HF

更新时间: 2024-01-06 22:54:02
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 230K
描述
Rectifier Diode, 2 Element, 0.075A, 75V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

BAV70-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.02配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.075 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.35 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAV70-TP-HF 数据手册

 浏览型号BAV70-TP-HF的Datasheet PDF文件第2页浏览型号BAV70-TP-HF的Datasheet PDF文件第3页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
BAV70  
Features  
Low Current Leakage  
Low Cost  
Small Outline Surface Mount Package  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
RoHS Compliant. See ordering information)  
350mW 75 Volt Dual  
Switching Diode  
C
x
Marking:A4/JA  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
Halogen free available upon request by adding suffix "-HF"  
SOT-23  
A
D
A
A
Maximum Ratings  
B
C
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
F
E
Maximum Thermal Resistance; 357Κ/W Junction To Ambient  
H
G
J
Electrical Characteristics @ 25°C Unless Otherwise Specified  
K
Reverse Voltage  
Average Rectified  
Output Current  
Power Dissipation  
Peak Forward Surge  
Current  
VR  
IO  
75V  
DIMENSIONS  
MM  
150mA  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
PTOT  
IFSM  
350mW  
1.0A  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
t=1s,Non-Repetitive  
Maximum  
F
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
855mV IFM = 10mA;  
TJ = 25°C*  
G
H
J
.085  
.37  
VR=75Volts  
K
2.5µA  
50µA  
TJ = 25°C  
TJ = 150°C  
Suggested Solder  
Pad Layout  
.031  
.800  
Typical Junction  
Capacitance  
Reverse Recovery  
Time  
CJ  
Trr  
2 pF  
4nS  
Measured at  
1.0MHz, VR=0V  
IF=10mA  
.035  
.900  
VR = 0V  
.079  
2.000  
inches  
mm  
RL=500Ω  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 3  

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