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BAV70W PDF预览

BAV70W

更新时间: 2024-11-17 06:41:31
品牌 Logo 应用领域
RECTRON 整流二极管开关光电二极管
页数 文件大小 规格书
2页 374K
描述
SOT-323 PLASTIC ENCAPSULATE SWITCHING DIODE

BAV70W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.2Is Samacsys:N
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):265
最大功率耗散:0.2 W认证状态:Not Qualified
最大反向恢复时间:0.004 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

BAV70W 数据手册

 浏览型号BAV70W的Datasheet PDF文件第2页 
RECTRON  
TECHNICAL SPECIFICATION  
SEMICONDUCTOR  
BAV70W  
SOT-323 PLASTIC ENCAPSULATE  
SWITCHING DIODE  
FEATURES  
* Power dissipation  
PD:  
200  
150  
mW (Tamb=25OC)  
Collector current  
IO:  
Collector - base voltage  
*
*
*
mA (Tamb=25OC)  
VR: 75  
V
SOT-323  
Operating and storage junction temperature range  
TJ,Tstg: -55OC to+150OC  
0.053(1.35)  
0.045(1.15)  
MECHANICAL DATA  
* Case: Molded plastic  
0.006(0.15)  
0.003(0.08)  
0.043(1.10)  
0.035(0.90)  
* Epoxy: UL 94V-O rate flame retardant  
* Lead: MIL-STD-202E method 208C guaranteed  
* Mounting position: Any  
0.004(0.10)  
0.000(0.00)  
REF 0.021(0.53)  
* Weight: 0.006 gram  
0.096(2.45)  
0.085(2.15)  
0.016(0.40)  
0.008(0.20)  
0.055(1.40)  
0.047(1.20)  
0.087(2.20)  
0.079(2.00)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )  
UNITS  
CHARACTERISTICS  
Reveres breakdown voltage (IR= 100mA)  
Reveres voltage leakage current (VR= 75V)  
SYMBOL  
MIN  
75  
TYP  
-
MAX  
-
V(BR)  
IR  
V
-
-
-
-
2.5  
mA  
715  
855  
(IF= 1mA)  
-
-
-
-
-
-
(IF= 10mA)  
Forward voltage  
VF  
mV  
(IF= 50mA)  
1000  
1250  
(IF= 150mA)  
CD  
trr  
-
-
-
-
Diode capacitance(VR= 0V, f= 1MHz)  
F
P
2
4
Reveres recovery time (IF= IR= 10mA, Irr= 0.1 x IR, RL= 100)  
nS  
2006-3  

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