BAV70W
Dual Chips Common Cathode
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
A
.
.
Fast Switching Speed
L
Surface Mount Package Ideally Suited for
Automatic Insertion
3
S
Top View
B
.
For General Purpose Switching Applications
High Conductance
1
2
.
V
G
ANODE
1
3
C
2
CATHODE
H
ANODE
J
D
K
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
70
Unit
Reverse Voltage
V
I
Vdc
R
SOT-323(SC-70)
Forward Current
200
500
mAdc
mAdc
Dim
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
F
A
B
C
D
G
H
J
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
I
FM(surge)
Symbol
Max
200
Unit
mW
Total Device Dissipation FR–5 Board(1)
P
D
T
A
= 25°C
Derate above 25°C
1.6
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
0.625
300
θJA
K
L
P
D
Alumina S ubstrate,(2)AT
=25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
S
V
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
JA
θ
All Dimension in mm
T
, Tstg
–55to+150
J
BAV70W
=
4, KJA
A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
70
—
Vdc
(BR )
(I
(BR) = 100 .Adc)
R everse Voltage Leakage C urrent
I
R
uAdc
pF
(V = 70 Vdc)
(V = 70 Vdc, T = 150°C )
R
—
—
5.0
100
R
J
Diode C apacitance
(V = 0, f = 1.0 MHz)
R
C
V
—
1.5
D
F
Forward Voltage
mVdc
(I = 1.0 mAdc)
—
—
—
—
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
R everse R ecovery Time
t
—
6.0
ns
V
rr
(I = I = 10 mAdc, I
= 1.0 mAdc) (Figure 1)
R
= 100
L
F
R
R (R E C )
Forward R ecovery T ime
—
V
1.75
R F
(I = 10 mAdc, t = 20 ns) (Figure 2)
F
r
1. FR…5 = 1.0
X
0.75
X
0.062 in.
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
3. For each individual diode while the second diode is unbiased.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2004 Rev. B
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