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BAV70W PDF预览

BAV70W

更新时间: 2024-02-24 20:59:21
品牌 Logo 应用领域
SECOS 二极管开关光电二极管
页数 文件大小 规格书
3页 489K
描述
Surface Mount Switching Diode

BAV70W 技术参数

生命周期:Active零件包装代码:SC-70
针数:3Reach Compliance Code:compliant
风险等级:5.69二极管类型:RECTIFIER DIODE
Base Number Matches:1

BAV70W 数据手册

 浏览型号BAV70W的Datasheet PDF文件第2页浏览型号BAV70W的Datasheet PDF文件第3页 
BAV70W  
Dual Chips Common Cathode  
Surface Mount Switching Diode  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
FEATURES  
A
.
.
Fast Switching Speed  
L
Surface Mount Package Ideally Suited for  
Automatic Insertion  
3
S
Top View  
B
.
For General Purpose Switching Applications  
High Conductance  
1
2
.
V
G
ANODE  
1
3
C
2
CATHODE  
H
ANODE  
J
D
K
MAXIMUM RATINGS (EACH DIODE)  
Rating  
Symbol  
Value  
70  
Unit  
Reverse Voltage  
V
I
Vdc  
R
SOT-323(SC-70)  
Forward Current  
200  
500  
mAdc  
mAdc  
Dim  
Min  
1.800  
1.150  
0.800  
0.300  
1.200  
0.000  
0.100  
0.350  
0.590  
2.000  
0.280  
Max  
F
A
B
C
D
G
H
J
2.200  
1.350  
1.000  
0.400  
1.400  
0.100  
0.250  
0.500  
0.720  
2.400  
0.420  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
FM(surge)  
Symbol  
Max  
200  
Unit  
mW  
Total Device Dissipation FR–5 Board(1)  
P
D
T
A
= 25°C  
Derate above 25°C  
1.6  
mW/°C  
°C/W  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
0.625  
300  
θJA  
K
L
P
D
Alumina S ubstrate,(2)AT  
=25°C  
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
S
V
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
DEVICE MARKING  
R
JA  
θ
All Dimension in mm  
T
, Tstg  
–55to+150  
J
BAV70W  
=
4, KJA  
A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)  
Characteristic Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
Reverse Breakdown Voltage  
V
70  
Vdc  
(BR )  
(I  
(BR) = 100 .Adc)  
R everse Voltage Leakage C urrent  
I
R
uAdc  
pF  
(V = 70 Vdc)  
(V = 70 Vdc, T = 150°C )  
R
5.0  
100  
R
J
Diode C apacitance  
(V = 0, f = 1.0 MHz)  
R
C
V
1.5  
D
F
Forward Voltage  
mVdc  
(I = 1.0 mAdc)  
715  
855  
1000  
1250  
F
(I = 10 mAdc)  
F
(I = 50 mAdc)  
F
(I = 150 mAdc)  
F
R everse R ecovery Time  
t
6.0  
ns  
V
rr  
(I = I = 10 mAdc, I  
= 1.0 mAdc) (Figure 1)  
R
= 100  
L
F
R
R (R E C )  
Forward R ecovery T ime  
V
1.75  
R F  
(I = 10 mAdc, t = 20 ns) (Figure 2)  
F
r
1. FR5 = 1.0  
X
0.75  
X
0.062 in.  
2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.  
3. For each individual diode while the second diode is unbiased.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2004 Rev. B  
Page 1 of 3  

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