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BAV70W/T4 PDF预览

BAV70W/T4

更新时间: 2024-11-19 14:47:59
品牌 Logo 应用领域
恩智浦 - NXP 光电二极管
页数 文件大小 规格书
15页 105K
描述
0.1A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SMD, SC-70, 3 PIN

BAV70W/T4 技术参数

生命周期:Transferred零件包装代码:SC-70
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.2
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JESD-30 代码:R-PDSO-G3最大非重复峰值正向电流:4 A
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:2.5 µA最大反向恢复时间:0.004 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAV70W/T4 数据手册

 浏览型号BAV70W/T4的Datasheet PDF文件第2页浏览型号BAV70W/T4的Datasheet PDF文件第3页浏览型号BAV70W/T4的Datasheet PDF文件第4页浏览型号BAV70W/T4的Datasheet PDF文件第5页浏览型号BAV70W/T4的Datasheet PDF文件第6页浏览型号BAV70W/T4的Datasheet PDF文件第7页 
BAV70 series  
High-speed switching diodes  
Rev. 07 — 27 November 2007  
Product data sheet  
1. Product profile  
1.1 General description  
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
Package  
configuration  
Configuration  
JEITA  
-
JEDEC  
BAV70  
SOT23  
TO-236AB small  
dual common cathode  
dual common cathode  
BAV70M  
SOT883  
SC-101  
-
leadless ultra  
small  
BAV70S  
SOT363  
SC-88  
-
very small  
quadruple common  
cathode/common cathode  
BAV70T  
BAV70W  
SOT416  
SOT323  
SC-75  
SC-70  
-
-
ultra small  
very small  
dual common cathode  
dual common cathode  
1.2 Features  
I High switching speed: trr 4 ns  
I Low leakage current  
I Low capacitance: Cd 1.5 pF  
I Reverse voltage: VR 100 V  
I Small SMD plastic packages  
1.3 Applications  
I High-speed switching  
I General-purpose switching  
1.4 Quick reference data  
Table 2.  
Symbol  
Per diode  
IR  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse current  
VR = 80 V  
-
-
-
-
-
-
0.5  
100  
4
µA  
V
VR  
reverse voltage  
[1]  
trr  
reverse recovery time  
ns  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.  

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