Datasheet > BAV70TT1/D

BAV70TT1/D

更新时间： 2024-11-24 23:34:31

品牌	Logo	应用领域
其他 - ETC		二极管开关
页数	文件大小	规格书
8页	126K
描述
Dual Switching Diode

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中文翻译

获取价格

数据手册

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BAV70TT1/D 数据手册

Preferred Device

http://onsemi.com

MAXIMUM RATINGS (T = 25°C)

ANODE

Rating

Reverse Voltage

Forward Current

Symbol

Max

Unit

Vdc

CATHODE

200

500

mAdc

ANODE

Peak Forward Surge Current

FM(surge)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation,

(1)

FR–4 Board

= 25°C

225

Derated above 25°C

1.8

mW/°C

°C/W

CASE 463

SOT–416/SC–75

STYLE 3

Thermal Resistance,

Junction to Ambient

555

θJA

(1)

Total Device Dissipation,

(2)

FR–4 Board

= 25°C

360

Derated above 25°C

2.9

mW/°C

°C/W

DEVICE MARKING

Thermal Resistance,

Junction to Ambient

345

θJA

(2)

Junction and Storage

Temperature Range

T , T

J stg

–55 to

+150

°C

(1) FR–4 @ Minimum Pad

(2) FR–4 @ 1.0 × 1.0 Inch Pad

ORDERING INFORMATION

Device

BAV70TT1

Package

Shipping

3000 / Tape & Reel

SOT–416

Preferred devices are recommended choices for future use

and best overall value.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 1

BAV70TT1/D

12 3 4 5 6 7 8

中文翻译

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与BAV70TT1/D相关器件

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BAV70UE6327XT	INFINEON	获取价格	Rectifier Diode, 4 Element, 0.2A, 85V V(RRM), Silicon, ROHS COMPLIANT, SC-74, 6 PIN
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