Dual Series Switching Diode
Formosa MS
BAL99W
BAW56W
BAV70W
SOT-323
BAV99W
Silicon epitaxial planar type
Features
(B)
(A)
(C)
Small surface mounting type
0.055 (1.40)
0.047 (1.20)
0.017 (0.43)
MIN
High reliability
0.089 (2.30)
0.079 (2.00)
High speed ( trr < 1.5 ns )
R 0.05
(0.002)
0.0010 (0.25)
0.0004 (0.10)
0.043 (1.10)
0.031 (0.80)
Mechanical data
Case : SOT-323
Dimensions in inches and (millimeters)
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Mounting Position : Any
SINGLE(Alt)
COMMON ANODE COMMON CATHODE
SERIES
BAL99W
BAW56W
BAV70W
BAV99W
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)
PARAMETER
Repetitive peak reverse voltage
Reverse voltage
CONDITIONS
Symbol
VRRM
VR
MIN.
TYP.
MAX.
UNIT
V
70
70
V
Peak forward surge current
Repetitive peak forward current
Forward current
tp= 1 us
IFSM
IFRM
IF
2.0
450
215
715
225
175
+150
A
mA
mA
mA
mW
Average forward current
Power dissipation
VR = 0
IFAV
PD
o
Junction temperature
Storage temperature
Tj
C
o
TSTG
-55
C
o
ELECTRICAL CHARACTERISTICS (AT TA=25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
VF
MIN.
TYP.
MAX.
0.855
1.250
2.5
UNIT
V
IF = 10mA
IF = 150mA
VR = 70V
Forward voltage
VF
V
IR
uA
uA
uA
V
o
VR = 20V , Tj = 150 C
Reverse current
IR
30
o
VR = 70V , Tj = 150 C
IR
50
Breakdown current
Diode capacitance
Reverse recovery time
IR = 100uA , TP/T = 0.01 TP = 0.3ms
VR = 0 , f = 1MHz , VHF = 50mV
V(BR)
CD
70
1.5
6
pF
ns
IF =10mA, VR = 10mA, IRR = 0.1 X IR, RL=100OHM
trr