BAV70-V
Vishay Semiconductors
Small Signal Switching Diode, Dual
Features
• Silicon epitaxial planar diode
• Fast switching dual diode with common
cathode
3
• This diode is also available in other
configurations including:a dual common
anode to cathode with type designation
BAV99-V, a dual common anode with
type designation BAW56-V, and a single diode
with type designation BAL99-V.
1
2
18108
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Mechanical Data
Case: SOT-23
Weight: approx. 8.8 mg
Parts Table
Part
Ordering code
Marking
JJ
Remarks
BAV70-V
BAV70-V-GS18 or BAV70-V-GS08
Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test conditions
Symbol
Value
70
Unit
V
Reverse voltage, peak reverse
voltage
VR, VRM
IF
Forward current (continuous)
250
2
mA
A
tp = 1 µs
tp = 1 ms
tp = 1 s
IFSM
IFSM
IFSM
Ptot
Non repetitive peak forward
current
1
A
0.5
A
3501)
Power dissipation
mW
1) Device on fiberglass substrate, see layout
Document Number 85546
Rev. 1.8, 12-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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