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BAV70TR PDF预览

BAV70TR

更新时间: 2024-02-17 12:13:59
品牌 Logo 应用领域
其他 - ETC 光电二极管
页数 文件大小 规格书
4页 298K
描述
DIODE ARRAY SCHOTTKY 75V SOT23

BAV70TR 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE认证状态:Not Qualified
最大反向恢复时间:0.006 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL

BAV70TR 数据手册

 浏览型号BAV70TR的Datasheet PDF文件第2页浏览型号BAV70TR的Datasheet PDF文件第3页浏览型号BAV70TR的Datasheet PDF文件第4页 
BAV70  
Technical Data  
Data Sheet N0592, Rev. B  
BAV70 SWITCHING DIODE  
Features  
High Conductance  
Fast Switching  
Surface Mount Package Ideally Suited for Automatic  
Insertion  
For General Purpose and Switching  
Plastic Material UL Recognition Flammability  
Classification 94V-O  
SOT-23  
This is a Pb − Free Device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
Schematic & Pin Configuration  
Mechanical Characteristics  
Case: SOT-23, Molded Plastic  
Terminals: Plated leads Solderable per MIL-STD-202,  
Method 208  
Mounting Position: Any  
Marking: A4  
Maximum Ratings@TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Limits  
Units  
Reverse Voltage  
Forward Current  
VR  
70  
V
IF  
IFSM  
200  
2.0  
mA  
A
Non-Repetitive Peak Forward Surge Current @t=8.3ms  
Power Dissipation  
PD  
225  
mW  
°C/W  
°C  
Typical Thermal Resistance, Junction to Ambient Air  
Junction and Storage Temperature Range  
RθJA  
TJ, TSTG  
556  
-55 to +150  
Electrical Characteristics @TA=25°C unless otherwise specified  
Characteristic  
Symbol  
Min  
Max  
Units  
Test Condition  
@IF=100uA  
Reverse Breakdown Voltage*  
VBR  
70  
-
V
0.715  
0.855  
1
@IF=1mA  
@IF=10mA  
@IF=50mA  
@IF=150mA  
Forward Voltage*  
VF  
-
V
1.25  
IR  
-
-
2.5  
1.5  
uA  
pF  
@VR=70V  
Reverse Leakage Current*  
CT  
VR=0V, f=1.0MHz  
Capacitance between terminals  
IF=IR=10mA,  
IRR=0.1×IR, RL=100Ω  
trr  
-
6.0  
ns  
Reverse Recovery Time  
* Pulse width < 300 µs, duty cycle < 2%  
Note: 1. Device mounted on fiberglass substrate 40×40×1.5mm  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   

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