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BAS86,115 PDF预览

BAS86,115

更新时间: 2024-12-01 21:11:03
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
9页 136K
描述
BAS86 - Schottky barrier single diode MELF 2-Pin

BAS86,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:MELF包装说明:O-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:7.38其他特性:ULTRA HIGH SPEED SWITCH
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.9 VJESD-30 代码:O-LELF-R2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.2 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.3 W
认证状态:Not Qualified最大重复峰值反向电压:250 V
最大反向电流:5 µA最大反向恢复时间:0.004 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS86,115 数据手册

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BAS86  
Schottky barrier single diode  
25 July 2012  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Schottky barrier diode with an integrated guard ring for stress protection,  
encapsulated in a small hermetically sealed SOD80C glass Surface-Mounted Device  
(SMD) package with tin-plated metal discs at each end. It is suitable for “automatic  
placement” and as such it can withstand immersion soldering.  
1.2 Features and benefits  
Low forward voltage  
High breakdown voltage  
Guard ring protected  
Hermetically sealed glass SMD package.  
1.3 Applications  
Ultra high-speed switching  
Voltage clamping  
Protection circuits  
Blocking diodes  
1.4 Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
IF(AV)  
average forward  
current  
[1]  
-
-
200  
mA  
VR  
VF  
reverse voltage  
forward voltage  
-
-
-
-
50  
V
IF = 100 mA; Tamb = 25 °C  
900  
mV  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
Scan or click this QR code to view the latest information for this product  
 
 
 
 
 
 

BAS86,115 替代型号

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