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BAS286

更新时间: 2024-11-28 22:48:11
品牌 Logo 应用领域
威世 - VISHAY 整流二极管肖特基二极管
页数 文件大小 规格书
4页 55K
描述
Schottky Barrier Diode

BAS286 数据手册

 浏览型号BAS286的Datasheet PDF文件第2页浏览型号BAS286的Datasheet PDF文件第3页浏览型号BAS286的Datasheet PDF文件第4页 
BAS286  
Vishay Telefunken  
Schottky Barrier Diode  
Features  
Integrated protection ring against  
static discharge  
Very low forward voltage  
Applications  
96 12009  
Applications where a very low forward voltage  
is required  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
50  
Unit  
V
V
R
Peak forward surge current  
Repetitive peak forward current t 1 s  
Forward current  
Average forward current  
Junction temperature  
Storage temperature range  
t = 10 ms  
I
I
5
500  
200  
200  
A
p
FSM  
FRM  
mA  
mA  
mA  
C
p
I
F
I
FAV  
T
125  
j
T
–65...+150  
C
stg  
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50mmx50mmx1.6mm  
Symbol  
Value  
320  
Unit  
K/W  
R
thJA  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =0.1mA  
Type  
Symbol Min  
Typ Max Unit  
V
F
V
F
V
F
V
F
V
F
300  
380  
450  
600  
900  
5
mV  
mV  
mV  
mV  
mV  
A
F
I =1mA  
F
I =10mA  
F
I =30mA  
F
I =100mA  
F
Reverse current  
V =40V  
R
I
R
Diode capacitance  
V =1V, f=1MHz  
R
C
D
8
pF  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85502  
Rev. 3, 01-Apr-99  
1 (4)  

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