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BAS5202VH6433XTMA1 PDF预览

BAS5202VH6433XTMA1

更新时间: 2024-11-30 19:13:19
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管
页数 文件大小 规格书
7页 68K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 45V V(RRM), Silicon, ROHS COMPLIANT, SC-79, 2 PIN

BAS5202VH6433XTMA1 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:ROHS COMPLIANT, SC-79, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.72配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.5 W参考标准:AEC-Q101
最大重复峰值反向电压:45 V表面贴装:YES
技术:SCHOTTKY端子形式:FLAT
端子位置:DUALBase Number Matches:1

BAS5202VH6433XTMA1 数据手册

 浏览型号BAS5202VH6433XTMA1的Datasheet PDF文件第2页浏览型号BAS5202VH6433XTMA1的Datasheet PDF文件第3页浏览型号BAS5202VH6433XTMA1的Datasheet PDF文件第4页浏览型号BAS5202VH6433XTMA1的Datasheet PDF文件第5页浏览型号BAS5202VH6433XTMA1的Datasheet PDF文件第6页浏览型号BAS5202VH6433XTMA1的Datasheet PDF文件第7页 
BAS52...  
Silicon Schottky Diode  
Medium current rectifier Schottky diode  
Low forward voltage at 200mA  
High reverse voltage  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAS52-02V  
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BAS52-02V  
Package  
Configuration  
Marking  
SC79  
single  
y
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
45  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
750  
mA  
I
F
Average rectified forward current (50/60Hz, sinus) I  
500  
mA  
FAV  
Non-repetitive peak surge forward current  
t = 100 µs  
I
2000  
FSM  
500  
mW  
°C  
Total power dissipation  
P
tot  
T 110°C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
R
60  
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-19  
1

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