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BAS521-7 PDF预览

BAS521-7

更新时间: 2024-11-30 08:48:27
品牌 Logo 应用领域
美台 - DIODES 二极管开关高压
页数 文件大小 规格书
4页 83K
描述
HIGH VOLTAGE SWITCHING DIODE

BAS521-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-F2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:19 weeks风险等级:1.18
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.25 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.325 W
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAS521-7 数据手册

 浏览型号BAS521-7的Datasheet PDF文件第2页浏览型号BAS521-7的Datasheet PDF文件第3页浏览型号BAS521-7的Datasheet PDF文件第4页 
BAS521  
HIGH VOLTAGE SWITCHING DIODE  
Features  
Mechanical Data  
Fast Switching Speed: max. 50 ns  
Case: SOD-523  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
High Reverse Breakdown Voltage: 300V  
Low Leakage Current: 100nA at room temperature  
Ultra Small Plastic SMD Package  
Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)  
"Green" Device (Note 4)  
Ordering Information: See Page 2  
Weight: 0.0014 grams (approximate)  
2
1
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
Repetitive Peak Reverse Voltage  
300  
V
VRRM  
Working Peak Reverse Voltage  
DC Blocking Voltage  
300  
V
VRWM  
Forward Current (Note 2)  
250  
4.5  
1
mA  
A
IF  
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs  
Repetitive Peak Forward Current (Note 2)  
IFSM  
IFRM  
A
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 2)  
Symbol  
Value  
325  
Unit  
mW  
PD  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
385  
°C/W  
°C  
Rθ  
JA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Reverse Breakdown Voltage (Note 1)  
Forward Voltage  
Symbol  
V(BR)R  
VF  
Min  
300  
Max  
1.1  
Unit  
V
Test Condition  
IR = 100μA  
IF = 100mA  
V
V
V
R = 5V  
R = 250V  
nA  
nA  
μA  
50  
150  
100  
Reverse Current (Note 1)  
IR  
VR = 250V, TJ = 150°C  
VR = 0, f = 1.0MHz  
IF = IR = 30mA,  
Total Capacitance  
5
pF  
CT  
trr  
Reverse Recovery Time  
50  
ns  
Irr = 0.1 x IR, RL = 100Ω  
Notes:  
1. Short duration pulse test used to minimize self-heating effect.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 4  
www.diodes.com  
July 2010  
© Diodes Incorporated  
BAS521  
Document number: DS32175 Rev. 4 - 2  

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