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BAS521DFN PDF预览

BAS521DFN

更新时间: 2024-12-01 18:10:03
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科信 - KEXIN /
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描述
Switching Diodes

BAS521DFN 数据手册

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SMD Type  
Diodes  
Switching Diodes  
BAS521DFN (KAS521DFN)  
SOD-882  
Unit:mm  
Features  
High switching speed: trr 50 ns  
High reverse voltage: VR 300 V  
Repetitive peak forward current: IFRM 1 A  
High-speed switching  
0.45  
0.55  
Typical Soldering Pattern(mm):  
0.55  
0.65  
High-voltage switching  
2
1
anode  
cathode  
-
+
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
Symbol  
Rating  
300  
Unit  
V
V
RM  
V
R
300  
I
F
250  
mA  
A
Forward Current @ Tsp 90 °C  
Repetitive Peak Forward Current  
Non-repetitive peak forward surge current (t=1us)  
Power Dissipation  
I
FRM  
FSM  
1
I
4.5  
P
d
500  
mW  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Solder Point  
Junction Temperature  
R
θJA  
500  
/W  
RθJSP  
120  
T
J
150  
Storage Temperature range  
T
stg  
-65 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
300  
Typ  
Max Unit  
Reverse breakdown voltage  
V
R
F
I
I
R
= 100 uA  
V
Forward voltage  
(Note.1)  
V
F
= 100 mA  
1.1  
V
V
V
R
R
R
= 250 V  
150  
100  
5
nA  
uA  
pF  
ns  
Reverse voltage leakage current  
IR  
= 250 V , Ta = 150℃  
= 0 V, f= 1 MHz  
Junction capacitance  
Reverse recovery time  
Cj  
t
rr  
(Note.2)  
50  
Note.1: Pulse test: tp = 300 μs; δ = 0.02.  
Note.2: When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA.  
Marking  
Marking  
C
1
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