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BAS52-02V-E6433 PDF预览

BAS52-02V-E6433

更新时间: 2024-11-30 14:19:23
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
7页 71K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 45V V(RRM),

BAS52-02V-E6433 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.76
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.42 V湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
最高工作温度:150 °C最大输出电流:0.5 A
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
Base Number Matches:1

BAS52-02V-E6433 数据手册

 浏览型号BAS52-02V-E6433的Datasheet PDF文件第2页浏览型号BAS52-02V-E6433的Datasheet PDF文件第3页浏览型号BAS52-02V-E6433的Datasheet PDF文件第4页浏览型号BAS52-02V-E6433的Datasheet PDF文件第5页浏览型号BAS52-02V-E6433的Datasheet PDF文件第6页浏览型号BAS52-02V-E6433的Datasheet PDF文件第7页 
BAS52...  
Silicon Schottky Diode  
Medium current rectifier Schottky diode  
Low forward voltage at 200mA  
High reverse voltage  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAS52-02V  
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BAS52-02V  
Package  
Configuration  
Marking  
SC79  
single  
y
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
45  
Unit  
V
Diode reverse voltage  
Forward current  
V
R
750  
mA  
I
F
Average rectified forward current (50/60Hz, sinus) I  
500  
mA  
FAV  
Non-repetitive peak surge forward current  
t = 100 µs  
I
2000  
FSM  
500  
mW  
°C  
Total power dissipation  
P
tot  
T 110°C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
R
60  
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-19  
1

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