Datasheet > BAS3010B

BAS3010B

更新时间： 2024-09-17 06:41:27

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
6页	63K
描述
Medium Power AF Schottky Diode

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BAS3010B 数据手册

BAS3010B...

Medium Power AF Schottky Diode

• Forward current: 1 A

• Reverse voltage: 30 V

• Low forward voltage, low reverse current

• For high efficiency DC/DC conversion,

fast switching, protection and

clamping applications

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAS3010B-03W

Type

Package

Configuration

Marking

BAS3010B-03W

SOD323

single

2/ red

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

Forward current

Average rectified forward current (50/60Hz, sinus) I

FAV

Repetitive peak forward current

3.5

FRM

(t ≤ 1 ms, D ≤ 0.5)

Non-repetitive peak surge forward current

(t ≤ 10 ms)

FSM

150

°C

Junction temperature

Operating temperature range

Storage temperature

-65 ... 125

-65 ... 150

stg

¹Pb-containing package may be available upon special request

²For T > 25°C the derating of V and I has to be considered. Please refer to the attached curves.

2007-04-19

12 3 4 5 6

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