Datasheet > BAS3010S

BAS3010S

更新时间： 2024-10-31 06:41:27

品牌	Logo	应用领域
英飞凌 - INFINEON		肖特基二极管
页数	文件大小	规格书
6页	62K
描述
Low VF Schottky Diode

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BAS3010S 数据手册

BAS3010S...

Low VF Schottky Diode

• Forward current: 1 A

• Reverse voltage: 30 V

• Low forward voltage and smallest package

form factor (1.0 x 0.6 x < 0.4 mm) for

mobile phone battery charger application

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAS3010S-03LRH

Type

Package

Configuration

Marking

BAS3010S-03LRH*

TSLP-3-7

single

* Preliminary data

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

2)3)

Forward current

Repetitive peak forward current

(t ≤ 1 ms, D ≤ 0.25)

3.5

FRM

Non-repetitive peak surge forward current

(t ≤ 10 ms)

FSM

150

°C

Junction temperature

Operating temperature range

-55 ... 125

-65 ... 150

Storage temperature

stg

Pb-containing package may be available upon special request

For T > 25°C the derating of V and I has to be considered.

Only valid if pin 1 and 2 are connected in parallel

2007-08-16

12 3 4 5 6

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