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BAS28WQ62702A3466 PDF预览

BAS28WQ62702A3466

更新时间: 2024-11-29 23:34:31
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
4页 40K
描述
DIODE DUAL SOT343

BAS28WQ62702A3466 数据手册

 浏览型号BAS28WQ62702A3466的Datasheet PDF文件第2页浏览型号BAS28WQ62702A3466的Datasheet PDF文件第3页浏览型号BAS28WQ62702A3466的Datasheet PDF文件第4页 
BAS 28W  
Silicon Switching Diode Array  
3
For high-speed switching applications  
Electrical insulated diodes  
4
2
VPS05605  
1
Type  
Marking Ordering Code  
JTs Q62702-A3466  
Pin Configuration  
Package  
BAS 28W  
1 = C1 2 = C2 3 = A2 4 = A1 SOT-343  
Maximum Ratings  
Parameter  
Symbol  
Value  
75  
Unit  
V
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
R
85  
RM  
200  
mA  
A
I
I
F
4.5  
Surge forward current, t = 1 µs  
FS  
250  
mW  
°C  
Total power dissipation, T = 103 °C  
P
T
T
S
tot  
j
Junction temperature  
Storage temperature  
150  
- 65 ...+150  
stg  
Thermal Resistance  
1)  
Junction - ambient  
R
R
460  
190  
K/W  
thJA  
thJS  
Junction - soldering point  
2
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm Cu  
Semiconductor Group  
1
Mar-16-1998  
1998-11-01  
Semiconductor Group  
1

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