Datasheet > BAS299

BAS299

更新时间： 2024-12-01 14:53:43

品牌	Logo	应用领域
先科 - SWST		开关小信号开关二极管
页数	文件大小	规格书
4页	673K
描述
小信号开关二极管

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中文翻译

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BAS299 数据手册

BAS299

Silicon Epitaxial Planar High Switching Diode

Features

• High switching speed

• Continuous reverse voltage

• Repetitive peak reverse voltage

• Repetitive peak forward current

1: Anode 2: Cathode

3: Common Connection

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25

Parameter

unless otherwise specified)

Symbol

V_RRM

V_R

Value

Unit

Peak Repetitive Reverse Voltage

Reverse Voltage

100

Single Diode

Double Diode

430

250

Forward Current

I_F

Repetitive Peak Forward Current

I_FRM

900

tp = 1 µs

tp = 1 ms

tp = 1 s

Non-repetitive Peak Forward Surge Current,

I_FSM

at Square Wave, Tj = 125°C Prior to Surge

Power Dissipation

P_D

T_j

250

150

Junction Temperature

Storage Temperature Range

T_stg

- 65 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

500

Unit

Thermal Resistance from Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.

Dated: 28/03/2023 Rev:01

1 / 4

12 3 4

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