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BAS29 PDF预览

BAS29

更新时间: 2024-12-01 11:14:03
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 175K
描述
通用高电压二极管

BAS29 技术参数

是否无铅: 不含铅生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:0.78
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.75 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:2 A
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:120 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
Base Number Matches:1

BAS29 数据手册

 浏览型号BAS29的Datasheet PDF文件第2页浏览型号BAS29的Datasheet PDF文件第3页浏览型号BAS29的Datasheet PDF文件第4页 
DATA SHEET  
www.onsemi.com  
Small Signal Diode  
BAS29  
3
2
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
A
1
Symbol  
Parameter  
Value  
120  
Unit  
V
SOT23 (TO236)  
V
RRM  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
CASE 318  
I
200  
mA  
F(AV)  
I
NonRepetitive Peak Forward Current  
Pulse Width = 1.0 Second  
Pulse Width = 1.0 Second  
FSM  
1.0  
2.0  
A
A
3
T
Storage Temperature Range  
55 to +150  
°C  
°C  
STG  
T
J
Operating Junction Temperature  
150  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
2NC  
1. These ratings are based on a maximum junction temperature of 150_C.  
2. These are steady state limits. The factory should be consulted on applications  
involving pulsed or low duty cycle operations.  
MARKING DIAGRAM  
3
THERMAL CHARACTERISTICS  
Symbol  
Parameter  
Power Dissipation  
Value  
350  
Unit  
mW  
L20M  
P
D
1
2
R
Thermal Resistance,  
Junction to Ambient  
357  
°C/W  
q
JA  
L20  
M
= Specific Device Code  
= Data Code  
ORDERING INFORMATION  
Device  
BAS29  
Package  
Shipping  
SOT233  
3000 /  
(PbFree / Halide Free) Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
Breakdown Voltage  
Forward Voltage  
Test Conditions  
Min  
120  
Max  
Unit  
V
V
R
I
= 1.0 mA  
R
V
F*  
I = 10 mA  
0.75  
0.84  
0.90  
1.00  
1.25  
V
F
I = 50 mA  
F
I = 100 mA  
F
I = 200 mA  
F
I = 400 mA  
F
I
R*  
Reverse Current  
V
V
= 90 V  
= 90 V, T = 150°C  
100  
100  
nA  
mA  
R
R
A
C
Total Capacitance  
V
= 0, f = 1.0 MHz  
2.0  
pF  
ns  
T
R
t
rr  
Reverse Recovery Time  
I = I = 30 mA, I = 3.0 mA,  
F
50  
R
RR  
R = 100 W  
L
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*Pulse test: Pulse width = 300 ms, Duty Cycle = 2%  
© Semiconductor Components Industries, LLC, 1997  
1
Publication Order Number:  
June, 2023 Rev. 1  
BAS29/D  

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