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BAS3005B02VH6327XTSA1 PDF预览

BAS3005B02VH6327XTSA1

更新时间: 2024-11-30 14:48:51
品牌 Logo 应用领域
英飞凌 - INFINEON 二极管
页数 文件大小 规格书
8页 850K
描述
Rectifier Diode,

BAS3005B02VH6327XTSA1 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:6 weeks风险等级:1.62
Is Samacsys:N二极管类型:RECTIFIER DIODE
JESD-609代码:e3湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BAS3005B02VH6327XTSA1 数据手册

 浏览型号BAS3005B02VH6327XTSA1的Datasheet PDF文件第2页浏览型号BAS3005B02VH6327XTSA1的Datasheet PDF文件第3页浏览型号BAS3005B02VH6327XTSA1的Datasheet PDF文件第4页浏览型号BAS3005B02VH6327XTSA1的Datasheet PDF文件第5页浏览型号BAS3005B02VH6327XTSA1的Datasheet PDF文件第6页浏览型号BAS3005B02VH6327XTSA1的Datasheet PDF文件第7页 
BAS3005B....  
Medium Power AF Schottky Diode  
Forward current: 0.5 A  
Reverse voltage: 30 V  
Low capacitance, low reverse current  
For high efficiency DC/DC conversion,  
fast switching, protecting and  
clamping applications  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAS3005B-02LRH*  
BAS3005B-02V  
1
2
Type  
BAS3005B-02LRH*  
BAS3005B-02V  
Package  
TSLP-2-17  
SC79  
Configuration  
single, leadless  
single  
Marking  
5B  
3
*Preliminary  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Diode reverse voltage  
RMS reverse voltage  
Forward current  
Average rectified forward current (50/60Hz, sinus) I  
Symbol  
Value  
30  
Unit  
V
1)  
V
V
R
-
R(RMS)  
1)  
500  
500  
mA  
A
I
F
FAV  
Repetitive peak forward current  
I
3.5  
FRM  
(t 1 ms, D 0.25)  
p
Non-repetitive peak surge forward current  
(t 10ms)  
I
FSM  
5
150  
°C  
Junction temperature  
T
j
Operating temperature range  
Storage temperature  
T
-55 ...125  
-65 ...150  
op  
T
stg  
2012-07-02  
1

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