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BAS3005A PDF预览

BAS3005A

更新时间: 2024-11-30 06:41:27
品牌 Logo 应用领域
英飞凌 - INFINEON 肖特基二极管
页数 文件大小 规格书
7页 65K
描述
Low VF Schottky Diode

BAS3005A 数据手册

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BAS3005A...  
Low VF Schottky Diode  
Forward current: 0.5 A  
Reverse voltage: 30 V  
Very low forward voltage  
(typ. 0.45 V @ I = 0.5 A)  
F
For low loss, fast-recovery protecting  
and clamping applications  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAS3005A-02V  
1
2
Type  
Package  
Configuration  
Marking  
BAS3005A-02V*  
* Preliminary data  
SC79  
single  
2
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
30  
Unit  
V
2)  
Diode reverse voltage  
V
R
2)  
500  
500  
3.5  
mA  
mA  
A
Forward current  
I
F
Average rectified forward current (50/60Hz, sinus) I  
FAV  
Repetitive peak forward current  
I
FRM  
(t 1 ms, D 0.25)  
p
Non-repetitive peak surge forward current  
(t 10 ms)  
I
5
FSM  
150  
°C  
Junction temperature  
T
T
T
j
Operating temperature range  
Storage temperature  
-55 ... 125  
-65 ... 150  
op  
stg  
1Pb-containing package may be available upon special request  
2For T > 25 °C the derating of VR and IF has to be considered.  
A
2007-04-19  
1

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