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BAS19WTP PDF预览

BAS19WTP

更新时间: 2024-09-16 13:05:51
品牌 Logo 应用领域
美微科 - MCC 整流二极管信号二极管光电二极管
页数 文件大小 规格书
3页 169K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, PLASTIC PACKAGE-3

BAS19WTP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.32配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:1端子数量:3
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大反向恢复时间:0.05 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS19WTP 数据手册

 浏览型号BAS19WTP的Datasheet PDF文件第2页浏览型号BAS19WTP的Datasheet PDF文件第3页 
BAS19  
THRU  
BAS21  
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
Features  
Ideally Suited for Automatic Insertion  
150oC Junction Temperature  
Fast Switching speed  
Small  
Signal Diodes  
250mW  
Epitaxial Planar Die Construction  
Mechanical Data  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
SOT-23  
Top View  
A
Weight: 0.008 grams ( approx.)  
D
3
Repetitive  
Peak  
Reverse  
Voltage  
VRRM (V)  
Continuous  
B
C
Reverse  
Voltage  
VR (V)  
MCC Part  
Number  
1
2
Marking  
F
E
BAS19  
BAS20  
BAS21  
JP  
JR  
JS  
100  
150  
200  
120  
200  
250  
H
G
J
K
DIMENSIONS  
MM  
Maximum Ratings @ 25oC Unless Otherwise Specified  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
Parameter Symbol Value Unit  
Non-repetitive Peak  
Forward Surge Current @ t=1s  
Average Rectified Forward Current  
Forward DC Current at Tamb=25oC  
Repetitive Peak Forward Current  
Power Dissipation up to Tamb=25oC  
Thermal Resistance Junction to  
Ambient  
@ t=1us  
2.5  
0.5  
IFSM  
A
F
G
H
J
(1)  
IF(AV)  
IF  
mA  
mA  
mA  
mW  
200  
.085  
.37  
K
(2)  
200  
625  
250  
Suggested Solder  
Pad Layout  
IFRM  
P
.031  
.800  
tot  
oC/W  
oC  
R
.035  
.900  
430  
JA  
.079  
2.000  
inches  
mm  
T, TSTG  
Operating & Storage Temperature  
-65~150  
j
Notes: (1) Measured under pulse conditions;  
Pulse time = tp <= 0.3ms  
.037  
.950  
.037  
.950  
(2) Device on fiberglass substrate,  
See layout on next page  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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