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BAS20 PDF预览

BAS20

更新时间: 2024-11-30 12:50:31
品牌 Logo 应用领域
鲁光 - LGE 二极管开关光电二极管
页数 文件大小 规格书
2页 198K
描述
Switching Diode

BAS20 技术参数

Case Style:SOT-23IF(mA):200
Maximum recurrent peak reverse voltage:150TRR(nS):50
Maximum instantaneous forward voltage:1.25@IF(uA):200
Maximum reverse current:0.1@VR:150
class:Diodes

BAS20 数据手册

 浏览型号BAS20的Datasheet PDF文件第2页 
BAS19/BAS20  
Switching Diode  
SOT-23  
Features  
Fast Switching Speed  
—
—
—
—
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
Marking: BAS19  
BAS20  
JP  
JR  
Dimensions in inches and (millimeters)  
Maximum Ratings @TA=25  
Parameter  
Symbol  
Unit  
BAS19  
100  
BAS20  
150  
Non-Repetitive Peak reverse voltage  
DC Blocking Voltage  
VRM  
VR  
V
Average Rectified Output Current  
Power Dissipation  
IO  
mA  
mW  
/W  
200  
250  
Pd  
Thermal Resistance. Junction to Ambient Air  
Junction temperature  
RθJA  
TJ  
500  
150  
Storage temperature range  
TSTG  
-65-150  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
MAX  
UNIT  
Reverse breakdown voltage  
BAS19  
BAS20  
100  
150  
V(BR) R  
IR= 100µA  
V
BAS19  
Reverse voltage leakage current BAS20  
VR=100V  
VR=150V  
IR  
0.1  
µA  
IF=100mA  
IF=200mA  
1
1.25  
Forward  
voltage  
V
VF  
CJ  
trr  
Junction Capacitance  
Reveres recovery time  
VR=0V, f=1MHz  
5
pF  
nS  
IF=IR=30mA,Irr=0.1×IR  
50  
http://www.luguang.cn  
mail:lge@luguang.cn  

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