Datasheet > BAS20

BAS20

更新时间： 2023-12-06 20:07:56

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描述
Switching Diodes Switch detector

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BAS20 数据手册

BAS19 - BAS21

SURFACE MOUNT SWITCHING DIODE

SOT-23

Features

Dim

Min

Max

Silicon planar epitaxial high speed diode

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

For switching and general purpose applications

Mechanical Data

TOP VIEW

Case:SOT-23

Weight: 0.008 grams (approximate)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Parameter

Working peak reverse voltage

=DC Blocking voltage

Test Conditions

Type

Symbol

V_RWM

=V_R

Value

100

150

200

120

200

250

2.5

Unit

BAS19

BAS20

BAS21

BAS19

BAS20

BAS21

Repetitive peak reverse voltage

Peak forward surge current

V_RRM

I_FSM

I_FRM

I_FAV

t=1 s

t=1s

0.5

Repetitive peak forward current

Average forward current

Forward current

625

200

400

t_p<0.3ms

T_Case=T_L(8mm from Case)

=T_amb

I_F

Power dissipation

T_Case=T_L(8mm from Case)

=T_amb

P_tot

250

Junction and storage

temperature range

T_j=T_stg–55...+150

T = 25 C

Parameter

Test Conditions

Type

Symbol Min Typ Max Unit

Forward voltage

I =100mA

I =200mA

1.0

1.25

Reverse current

V =V

100 nA

Rmax

V =V

, T = 150 C

100

Rmax

Reverse breakdown voltage I =100 A, t <0.3ms

BAS19

BAS20

BAS21

(BR)R

120

200

250

I =100 A

I =100 A, V <275V

Reverse recovery time

Diode capacitance

I =I =10mA, R =100 ,

V =6V to I =1mA. R =100

V =0, f= 1MHz

Dynamic forward resistance I =10mA

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