Datasheet > BAS19

BAS19

更新时间： 2024-11-14 12:51:15

品牌	Logo	应用领域
威伦 - WILLAS		二极管光电二极管
页数	文件大小	规格书
2页	337K
描述
SOT-23 Plastic-Encapsulate Diodes

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数据手册

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BAS19 数据手册

WILLAS

BAS19

BAS20

SOT-23 Plastic-Encapsulate Diodes

SWITCHING DIODE

SOT-23

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

Marking: BAS19

BAS20

JR or A80

Maximum Ratings @Ta=25℃

Parameter

Symbol

Unit

BAS19

BAS20

Non-Repetitive Peak Reverse Voltage

DC Blocking Voltage

V_RM

V_R

I_O

100

150

Average Rectified Output Current

Power Dissipation

℃/W

℃

200

625

150

Thermal Resistance. Junction to Ambient

JunctionTemperature

R JA

T_J

Storage Temperature Range

T_STG

℃

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

BAS19

BAS20

BAS19

BAS20

100

150

V_{(BR) R}

I_R= 100µA

VR=100V

VR=150V

I_R

0.1

µA

Reverse voltage leakage current

Forward voltage

I_F=100mA

I_F=200mA

1.25

V_F

C_J

t_rr

Junction capacitance

Reveres recovery time

V_R=0V, f=1MHz

I_F=I_R=30mA,I_rr=0.1×I_R

2012-12

WILLAS ELECTRONIC CORP.

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与BAS19相关器件

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BAS19, BAS20, BAS21	VISHAY	获取价格	Small Signal Switching Diodes, High Voltage
BAS19,215	NXP	获取价格	BAS19 - High-voltage switching diode TO-236 3-Pin
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BAS19/E8	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB
BAS19/E9	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, TO-236AB
BAS19/T3	NXP	获取价格	DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
BAS19/T4	NXP	获取价格	DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
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BAS19_07	TSC	获取价格	Surface Mount Fast Switching Diode