Datasheet > BAS19_18

BAS19_18

更新时间： 2022-02-26 14:56:52

品牌	Logo	应用领域
海德 - HDSEMI		/
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描述
SOT-23 Plastic-Encapsulate Diodes

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数据手册

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BAS19_18 数据手册

BAS19/BAS20

SOT-23 Plastic-Encapsulate Diodes

Switching Diodes

Features

SOT- 23

●

Fast Switching Speed

● Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

●

Applications

●

Extreme fast switches

Marking:

●

BAS19 : JP

BAS20 : JR

Symbol

Parameter

Repetitive Peak Reverse Voltage

BAS19

120

BAS20

200

Unit

V_RRM

V_RWM

I_O

Working Peak Reverse Voltage

Average Rectified Output Current

Non-Repetitive Peak Forward Surge Current @t=

Power Dissipation

100

150

200

2.5

I_FSM

8.3ms

P_d

R_θJA

T_J

250

500

150

℃/W

℃

Thermal Resistance from Junction to Ambient

Junction temperature

T_stg

Storage Temperature

-55 ~ +150

℃

Electrical Characteristics (Ta=25℃ Unless otherwise specified）

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Reverse breakdown voltage

BAS19

BAS20

BAS19

BAS20

120

200

I_R=100μA

V_(BR)

Reverse current

Forward voltage

V_R=100V

V_R=150V

0.1

μA

I_R

I_F=100mA

1.25

V_F

I_F=200mA

Diodes capacitance

C_D

t_rr

V_R=0V, f=1MHz

I_F=I_R=30mA,I_rr=0.1*I_R

Reveres recovery time

igh Diode Semiconductor

12 3 4

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