Datasheet > BAS19201

BAS19201

更新时间： 2024-09-12 23:34:31

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BAS19201 数据手册

BAS19

BAS20

BAS21

SOT23 SILICON HIGH

SPEED SWITCHING DIODE

ISSUE 2 JANUARY 1995

PIN CONFIGURATION

PARTMARKING DETAILS

BAS19 A8

BAS20 A81

BAS21 A82

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_R

BAS19

100

BAS20

150

BAS21

200

UNIT

Continuous Reverse Voltage

Repetative Peak Reverse Voltage

Average Forward Rectified Current

Forward Current

V_RRM

I_F(AV)

I_F

120

200

250

200

°C

200

Repetative Peak Forward Current

Power Dissipation at T_amb=25°C

I_FRM

625

P_tot

330

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

V_(BR)

Reverse

Breakdown

Voltage

BAS19

BAS20

BAS21

120

200

250

I_R=100µA (1)

I_R=100µA (2)

Reverse Current

I_R

100

µA

V_R=V_Rmax

V_R=V_Rmax, T_J=150°C

Static Forward Voltage V_F

Differential Resistance r_diff

1.00

1.25

IF=100mA

I_F=200mA

I_F=10mA

Ω

Diode Capacitance

C_d

f=1MHz

Reverse Recovery Time t_rr

I_F=30mA to I_R=30mA

R_L=10Ω measured at I_R=3mA

(1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

(2) At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage

limited to 275V

Spice parameter data is available upon request for this device

PAGE NO

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