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BAS19-E3-18 PDF预览

BAS19-E3-18

更新时间: 2024-11-24 21:12:31
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 86K
描述
Rectifier Diode, 1 Element, 0.2A, 120V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

BAS19-E3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:12 weeks风险等级:4.71
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.5 A
元件数量:1端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.25 W最大重复峰值反向电压:120 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS19-E3-18 数据手册

 浏览型号BAS19-E3-18的Datasheet PDF文件第2页浏览型号BAS19-E3-18的Datasheet PDF文件第3页浏览型号BAS19-E3-18的Datasheet PDF文件第4页 
BAS19, BAS20, BAS21  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diode  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.8 mg  
Packaging codes/options:  
18/10K per 13” reel (8 mm tape), 10K/box  
08/3K per 7” reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
TYPE  
MARKING  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
REMARKS  
BAS19-E3-08 or BAS19-E3-18  
BAS19-HE3-08 or BAS19-HE3-18  
BAS20-E3-08 or BAS20-E3-18  
BAS20-HE3-08 or BAS20-HE3-18  
BAS21-E3-08 or BAS21-E3-18  
BAS21-HE3-08 or BAS21-HE3-18  
BAS19  
BAS20  
BAS21  
VR = 100 V  
VR = 150 V  
VR = 200 V  
A8  
Single diode  
Single diode  
Single diode  
Tape and reel  
A81  
A82  
Tape and reel  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BAS19  
BAS20  
BAS21  
BAS19  
BAS20  
BAS21  
SYMBOL  
VALUE  
100  
UNIT  
VR  
V
V
V
V
V
V
Continuous recerse voltage  
VR  
150  
VR  
200  
VRRM  
VRRM  
VRRM  
120  
Repetitive peak reverse voltage  
200  
250  
Non repetitive peak forward   
t = 1 μs  
t = 1 s  
IFSM  
IFSM  
IF(AV)  
2.5  
0.5  
A
A
current  
Non repetitive peak forward   
surge current  
Maximum average forward   
(av. over any 20 ms period)  
200  
mA  
rectified current (1)  
DC forward current (2)  
IF  
200  
625  
250  
mA  
mA  
mW  
Repetitive peak forward current  
Power dissipation (2)  
IFRM  
Ptot  
Notes  
(1)  
Measured under pulse conditions; pulse time = tp 0.3 ms  
Device on fiberglass substrate, see layout on next page  
(2)  
Rev. 1.8, 15-May-13  
Document Number: 85540  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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