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BAS19, BAS20, BAS21

更新时间： 2024-11-25 14:54:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 82K
描述
Small Signal Switching Diodes, High Voltage

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BAS19, BAS20, BAS21 数据手册

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BAS19, BAS20, BAS21  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diode  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
• AEC-Q101 qualified available  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.8 mg  
Packaging codes / options:  
18/10K per 13” reel (8 mm tape), 10K/box  
08/3K per 7” reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
TYPE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
REMARKS  
Tape and reel  
Tape and reel  
Tape and reel  
DIFFERENTIATION  
MARKING  
BAS19-E3-08 or BAS19-E3-18  
BAS19-HE3-08 or BAS19-HE3-18  
BAS19  
BAS20  
BAS21  
V
V
V
R = 100 V  
R = 150 V  
R = 200 V  
A8  
Single  
Single  
Single  
BAS20-E3-08 or BAS20-E3-18  
BAS20-HE3-08 or BAS20-HE3-18  
A81  
A82  
BAS21-E3-08 or BAS21-E3-18  
BAS21-HE3-08 or BAS21-HE3-18  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BAS19  
BAS20  
BAS21  
BAS19  
BAS20  
BAS21  
SYMBOL  
VALUE  
100  
UNIT  
VR  
V
V
V
V
V
V
Continuous reverse voltage  
VR  
150  
VR  
200  
VRRM  
VRRM  
VRRM  
120  
Repetitive peak reverse voltage  
200  
250  
Non repetitive peak forward  
current  
t = 1 μs  
t = 1 s  
IFSM  
IFSM  
IF(AV)  
2.5  
0.5  
200  
A
A
Non repetitive peak forward  
surge current  
Maximum average forward  
(av. over any 20 ms period)  
mA  
rectified current (1)  
DC forward current (2)  
IF  
200  
625  
250  
mA  
mA  
mW  
Repetitive peak forward current  
Power dissipation (2)  
IFRM  
Ptot  
Notes  
(1)  
Measured under pulse conditions; pulse time = tp ≥ 0.3 ms  
Device on fiberglass substrate, see layout on next page  
(2)  
Rev. 1.2, 13-Feb-18  
Document Number: 85540  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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