BAP64-04-TP

更新时间： 2024-11-05 12:59:11

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
3页	497K
描述
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中文翻译

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数据手册

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BAP64-04-TP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAP64-04

Micro Commercial Components

Features

General

Purpose Pin Diodes

250mW

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Low diode capacitance

Low diode forward resistance

MARKING: 4K

SOT-23

Maximum Ratings @ 25°C Unless Otherwise Specified

Parameter

Continuous Reverse Voltage

Forward Current

Symbol

V_R

Limits

Unit

175

100

250

I_F

℃

Power Dissipation(T_A=90^oC)

P_D

Junction and Storage temperature

T_j，P_stg

-65~+150

Thermal Resistance Junction to

Ambient

^oC/W

RthJA

500

DIMENSIONS

INCHES

MIN

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIM

MAX

.120

.104

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

Parameter

Symbol Min. TYP Max. Unit

Conditions

Reverse Voltage

Leakage

I_R

V_R=175V

1.0

1.1

V_R=20V

Current

.100

1.12

.180

.51

Forward voltage

V_F

I_F=50mA

.085

.37

Suggested Solder

Pad Layout

C_d1

C_d2

C_d3

r_D

0.52

pF V_R=0V,f=1MHz

pF V_R=1V,f=1MHz

pF V_R=20V,f=1MHz

Diode capacitance

0.5

.031

.800

0.35

.035

.900

Ω

I_F=0.5mA, f=100MHz

Diode forward

.079

2.000

inches

r_D

Ω

I_F=1mA , f=100MHz

I_F=10mA , f=100MHz

resistance

3.8

r_D

0.7

1.35

Ω

I_F=100mA , f=100MHz

.037

.950

when switched from

I_{F=10 mAto IR= 6 mA; RL=}

100Ω;measured at I_R=3mA

IF=100mA, f=100MHz

Charge carrier

life time

.037

.950

1.55

1.4

μS

τ_L

Series inductance

L_S

www.mccsemi.com

1 of 3

Revision: A

2012/11/13

12 3

中文翻译

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