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AT29LV040A-20JU PDF预览

AT29LV040A-20JU

更新时间： 2024-09-20 21:09:19
品牌 Logo 应用领域
爱特美尔 - ATMEL 内存集成电路
页数 文件大小 规格书
16页 370K
描述
Flash, 512KX8, 200ns, PQCC32, PLASTIC, MS-016AE, LCC-32

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中文翻译

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AT29LV040A-20JU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：QFJ包装说明：PLASTIC, MS-016AE, LCC-32
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.83最长访问时间：200 ns
其他特性：AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION启动块：BOTTOM/TOP
JESD-30 代码：R-PQCC-J32JESD-609代码：e3
长度：13.97 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：2功能数量：1
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8封装主体材料：PLASTIC/EPOXY
封装代码：QCCJ封装形状：RECTANGULAR
封装形式：CHIP CARRIER并行/串行：PARALLEL
峰值回流温度（摄氏度）：245编程电压：3 V
认证状态：Not Qualified座面最大高度：3.556 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：J BEND
端子节距：1.27 mm端子位置：QUAD
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：11.43 mm最长写入周期时间 (tWC)：20 ms
Base Number Matches：1

AT29LV040A-20JU 数据手册

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Features  
• Single Voltage, Range 3V to 3.6V Supply  
• 3-volt Only Read and Write Operation  
• Software Protected Programming  
• Fast Read Access Time – 150 ns  
• Low Power Dissipation  
– 15 mA Active Current  
– 40 µA CMOS Standby Current  
• Sector Program Operation  
4-megabit  
(512K x 8)  
3-volt Only  
256-byte Sector  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 2048 Sectors (256 Bytes/Sector)  
– Internal Address and Data Latches for 256 Bytes  
• Two 16K Bytes Boot Blocks with Lockout  
• Fast Sector Program Cycle Time – 20 ms Max  
• Internal Program Control and Timer  
• DATA Polling for End of Program Detection  
• Typical Endurance > 10,000 Cycles  
• CMOS and TTL Compatible Inputs and Outputs  
• Commercial and Industrial Temperature Ranges  
• Green (Pb/Halide-free) Packaging Option  
AT29LV040A  
1. Description  
The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times to 150 ns, and a low 54 mW power dissipation. When  
the device is deselected, the CMOS standby current is less than 40 µA. The device  
endurance is such that any sector can typically be written to in excess of 10,000  
times. The programming algorithm is compatible with other devices in Atmel’s 3-volt  
only Flash memories.  
To allow for simple in-system reprogrammability, the AT29LV040A does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29LV040A is performed on a sector basis; 256 bytes  
of data are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0334G–FLASH–2/05  
1234567...16

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