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AT29LV040A-20TIT/R PDF预览

AT29LV040A-20TIT/R

更新时间： 2024-11-24 12:59:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
10页 436K
描述
Flash, 512KX8, 200ns, PDSO32, PLASTIC, TSOP-32

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中文翻译

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AT29LV040A-20TIT/R 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP
包装说明：PLASTIC, TSOP-32针数：32
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.89
最长访问时间：200 ns其他特性：AUTOMATIC WRITE
JESD-30 代码：R-PDSO-G32JESD-609代码：e0
长度：18.4 mm内存密度：4194304 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
编程电压：3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：TIN LEAD
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：30
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

AT29LV040A-20TIT/R 数据手册

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AT29LV040A  
Features  
Single Voltage, Range 3V to 3.6V Supply  
3-Volt-Only Read and Write Operation  
Software Protected Programming  
Fast Read Access Time - 200 ns  
•
•
•
•
Low Power Dissipation  
•
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
•
Single Cycle Reprogram (Erase and Program)  
2048 Sectors (256 bytes/sector)  
4 Megabit  
(512K x 8)  
Internal Address and Data Latches for 256-Bytes  
Two 16 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms Max.  
•
•
3-volt Only  
256 Byte Sector  
CMOS Flash  
Memory  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
•
•
•
•
Commercial and Industrial Temperature Ranges  
•
Description  
The AT29LV040A is a 3-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times up to 200 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 20 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
3-volt-only Flash memories.  
AT29LV040A  
To allow for simple in-system reprogrammability, the AT29LV040A does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29LV040A is performed on a sector basis; 256-bytes of data  
are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256-bytes of data are captured  
at microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automat-  
ically erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
TSOP Top View  
Type 1  
Pin Configurations  
Pin Name Function  
A0 - A18  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
0334C  
4-83  
1234567...10

中文翻译

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