Datasheet > 存储 > 闪存> AT29LV040A-20TC

AT29LV040A-20TC

更新时间： 2024-11-23 22:53:59

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
10页	436K
描述
4 Megabit 512K x 8 3-volt Only 256 Byte Sector CMOS Flash Memory

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替代型号

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AT29LV040A-20TC 数据手册

AT29LV040A

Features

Single Voltage, Range 3V to 3.6V Supply

3-Volt-Only Read and Write Operation

Software Protected Programming

Fast Read Access Time - 200 ns

•

Low Power Dissipation

•

15 mA Active Current

20 µA CMOS Standby Current

Sector Program Operation

•

Single Cycle Reprogram (Erase and Program)

2048 Sectors (256 bytes/sector)

4 Megabit

(512K x 8)

Internal Address and Data Latches for 256-Bytes

Two 16 KB Boot Blocks with Lockout

Fast Sector Program Cycle Time - 20 ms Max.

•

3-volt Only

256 Byte Sector

CMOS Flash

Memory

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

•

Commercial and Industrial Temperature Ranges

•

Description

The AT29LV040A is a 3-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times up to 200 ns, and a low 54 mW power dissipation.

When the device is deselected, the CMOS standby current is less than 20 µA. The

device endurance is such that any sector can typically be written to in excess of

10,000 times. The programming algorithm is compatible with other devices in Atmel’s

3-volt-only Flash memories.

AT29LV040A

To allow for simple in-system reprogrammability, the AT29LV040A does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29LV040A is performed on a sector basis; 256-bytes of data

are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256-bytes of data are captured

at microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automat-

ically erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

TSOP Top View

Type 1

Pin Configurations

Pin Name Function

A0 - A18

Addresses

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

0334C

4-83

12 3 4 5 6 7...10

中文翻译

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AT29LV040A-20TC 替代型号

型号	品牌	替代类型	描述	数据表
AT29LV040A-20TI	ATMEL	完全替代	4 Megabit 512K x 8 3-volt Only 256 Byte Sector CMOS Flash Memory

与AT29LV040A-20TC相关器件

型号	品牌	获取价格	描述	数据表
AT29LV040A-20TI	ATMEL	获取价格	4 Megabit 512K x 8 3-volt Only 256 Byte Sector CMOS Flash Memory
AT29LV040A-20TIT/R	ATMEL	获取价格	Flash, 512KX8, 200ns, PDSO32, PLASTIC, TSOP-32
AT29LV040A-20TU	ATMEL	获取价格	Flash, 512KX8, 200ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT29LV040A-25DC	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25DI	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25JC	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|LDCC\|32PIN\|PLASTIC
AT29LV040A-25JI	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25JU	ATMEL	获取价格	Flash, 512KX8, 250ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT29LV040A-25PC	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25PI	ETC	获取价格	x8 Flash EEPROM

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