Datasheet > AT29LV040A-20TU

AT29LV040A-20TU

更新时间： 2024-11-09 03:15:59

品牌	Logo	应用领域
爱特美尔 - ATMEL		光电二极管
页数	文件大小	规格书
16页	370K
描述
Flash, 512KX8, 200ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

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AT29LV040A-20TU 数据手册

Features

• Single Voltage, Range 3V to 3.6V Supply

• 3-volt Only Read and Write Operation

• Software Protected Programming

• Fast Read Access Time – 150 ns

• Low Power Dissipation

– 15 mA Active Current

– 40 µA CMOS Standby Current

• Sector Program Operation

4-megabit

(512K x 8)

3-volt Only

256-byte Sector

Flash Memory

– Single Cycle Reprogram (Erase and Program)

– 2048 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

• Two 16K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms Max

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Commercial and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

AT29LV040A

1. Description

The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 150 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 40 µA. The device

endurance is such that any sector can typically be written to in excess of 10,000

times. The programming algorithm is compatible with other devices in Atmel’s 3-volt

only Flash memories.

To allow for simple in-system reprogrammability, the AT29LV040A does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV040A is performed on a sector basis; 256 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0334G–FLASH–2/05

12 3 4 5 6 7...16

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与AT29LV040A-20TU相关器件

型号	品牌	获取价格	描述	数据表
AT29LV040A-25DC	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25DI	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25JC	ETC	获取价格	EEPROM\|FLASH\|512KX8\|CMOS\|LDCC\|32PIN\|PLASTIC
AT29LV040A-25JI	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25JU	ATMEL	获取价格	Flash, 512KX8, 250ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT29LV040A-25PC	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25PI	ETC	获取价格	x8 Flash EEPROM
AT29LV040A-25TC	ATMEL	获取价格	4 Megabit 512K x 8 3-volt Only 256 Byte Sector CMOS Flash Memory
AT29LV040A-25TI	ATMEL	获取价格	4 Megabit 512K x 8 3-volt Only 256 Byte Sector CMOS Flash Memory
AT29LV040A-25TU	ATMEL	获取价格	Flash, 512KX8, 250ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

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