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AT29LV040A-25TI PDF预览

AT29LV040A-25TI

更新时间： 2024-11-23 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
10页 436K
描述
4 Megabit 512K x 8 3-volt Only 256 Byte Sector CMOS Flash Memory

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中文翻译

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AT29LV040A-25TI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
针数：32Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.82最长访问时间：250 ns
其他特性：AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION启动块：BOTTOM/TOP
命令用户界面：NO数据轮询：YES
耐久性：10000 Write/Erase CyclesJESD-30 代码：R-PDSO-G32
JESD-609代码：e0长度：18.4 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8湿度敏感等级：3
功能数量：1部门数/规模：2K
端子数量：32字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX8输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP32,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE页面大小：256 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：3.3 V编程电压：3 V
认证状态：Not Qualified座面最大高度：1.2 mm
部门规模：256最大待机电流：0.00005 A
子类别：Flash Memories最大压摆率：0.015 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30切换位：YES
类型：NOR TYPE宽度：8 mm
最长写入周期时间 (tWC)：20 msBase Number Matches：1

AT29LV040A-25TI 数据手册

 浏览型号AT29LV040A-25TI的Datasheet PDF文件第2页浏览型号AT29LV040A-25TI的Datasheet PDF文件第3页浏览型号AT29LV040A-25TI的Datasheet PDF文件第4页浏览型号AT29LV040A-25TI的Datasheet PDF文件第5页浏览型号AT29LV040A-25TI的Datasheet PDF文件第6页浏览型号AT29LV040A-25TI的Datasheet PDF文件第7页 
AT29LV040A  
Features  
Single Voltage, Range 3V to 3.6V Supply  
3-Volt-Only Read and Write Operation  
Software Protected Programming  
Fast Read Access Time - 200 ns  
•
•
•
•
Low Power Dissipation  
•
15 mA Active Current  
20 µA CMOS Standby Current  
Sector Program Operation  
•
Single Cycle Reprogram (Erase and Program)  
2048 Sectors (256 bytes/sector)  
4 Megabit  
(512K x 8)  
Internal Address and Data Latches for 256-Bytes  
Two 16 KB Boot Blocks with Lockout  
Fast Sector Program Cycle Time - 20 ms Max.  
•
•
3-volt Only  
256 Byte Sector  
CMOS Flash  
Memory  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
•
•
•
•
Commercial and Industrial Temperature Ranges  
•
Description  
The AT29LV040A is a 3-volt-only in-system Flash Programmable and Erasable Read  
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,  
the device offers access times up to 200 ns, and a low 54 mW power dissipation.  
When the device is deselected, the CMOS standby current is less than 20 µA. The  
device endurance is such that any sector can typically be written to in excess of  
10,000 times. The programming algorithm is compatible with other devices in Atmel’s  
3-volt-only Flash memories.  
AT29LV040A  
To allow for simple in-system reprogrammability, the AT29LV040A does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an EPROM.  
Reprogramming the AT29LV040A is performed on a sector basis; 256-bytes of data  
are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256-bytes of data are captured  
at microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automat-  
ically erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
TSOP Top View  
Type 1  
Pin Configurations  
Pin Name Function  
A0 - A18  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
0334C  
4-83  
1234567...10

中文翻译

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