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AT29LV1024-15 PDF预览

AT29LV1024-15

更新时间: 2024-11-07 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
10页 535K
描述
1 Megabit 64K x 16 3-volt Only CMOS Flash Memory

AT29LV1024-15 数据手册

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AT29LV1024  
Features  
Single Voltage, Range 3V to 3.6V Supply  
3-Volt-Only Read and Write Operation  
Software Protected Programming  
Fast Read Access Time - 150 ns  
Low Power Dissipation  
15 mA Active Current  
50 µA CMOS Standby Current  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
512 Sectors (128 words/sector)  
1 Megabit  
(64K x 16)  
3-volt Only  
CMOS Flash  
Memory  
Internal Address and Data Latches for 128 Words  
Fast Sector Program Cycle Time - 20 ms  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29LV1024 is a 3-volt-only in-system Flash programmable and erasable read  
only memory (PEROM). Its 1 megabit of memory is organized as 65,536 words by 16  
bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device  
offers access times to 150 ns with power dissipation of just 54 mW. When the device  
is deselected, the CMOS standby current is less than 50 µA. The device endurance  
is such that any sector can typically be written to in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29LV1024 does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
(continued)  
AT29LV1024  
Pin Configurations  
Pin Name  
A0 - A15  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
Data  
Inputs/Outputs  
I/O0 - I/O15  
NC  
DC  
No Connect  
Don’t Connect  
TSOP Top View  
Type 1  
PLCC Top View  
0564A  
4-63  

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