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AT29LV020-25TU PDF预览

AT29LV020-25TU

更新时间: 2024-09-20 20:39:39
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
16页 371K
描述
Flash, 256KX8, 250ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

AT29LV020-25TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.84最长访问时间:250 ns
其他特性:AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTIONJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:18.4 mm
内存密度:2097152 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:8 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29LV020-25TU 数据手册

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Features  
Single Voltage, Range 3V to 3.6V Supply  
3-volt Only Read and Write Operation  
Software Protected Programming  
Fast Read Access Time – 100 ns  
Low Power Dissipation  
– 15 mA Active Current  
– 40 µA CMOS Standby Current  
Sector Program Operation  
2-megabit  
(256K x 8)  
3-volt Only  
Flash Memory  
– Single Cycle Reprogram (Erase and Program)  
– 1024 Sectors (256 Bytes/Sector)  
– Internal Address and Data Latches for 256 Bytes  
Two 8K Bytes Boot Blocks with Lockout  
Fast Sector Program Cycle Time – 20 ms  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
AT29LV020  
1. Description  
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read  
only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device  
offers access times to 100 ns with power dissipation of just 54 mW over the commer-  
cial temperature range. When the device is deselected, the CMOS standby current is  
less than 40 µA. The device endurance is such that any sector can typically be written  
to in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29LV020 does not require  
high input voltages for programming. Five-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29LV020 is performed on a sector basis; 256 bytes  
of data are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 256 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0565D–FLASH–2/05  

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