Features
• Single Voltage, Range 3V to 3.6V Supply
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Fast Read Access Time - 150 ns
• Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
4-megabit
(512K x 8)
3-volt Only
256-byte Sector
Flash Memory
– Internal Address and Data Latches for 256 Bytes
• Two 16K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time - 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 150 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40 µA. The device
endurance is such that any sector can typically be written to in excess of 10,000 times.
The programming algorithm is compatible with other devices in Atmel’s 3-volt only
Flash memories.
AT29LV040A
Pin Configurations
TSOP Top View
Pin Name
A0 - A18
CE
Function
Type 1
Addresses
A11
A9
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
2
A10
CE
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
A8
3
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
4
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
OE
5
6
WE
7
8
I/O0 - I/O7
NC
9
10
11
12
13
14
15
16
A6
A1
PLCC Top View
A5
A2
A4
A3
A7
A6
A5
A4
A3
5
6
7
8
9
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
A2 10
A1 11
A0 12
I/O0 13
Rev. 0334F–FLASH–05/02
1