Datasheet > APTGF75H120TG_10

APTGF75H120TG_10

更新时间： 2024-11-25 08:33:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		双极性晶体管
页数	文件大小	规格书
5页	191K
描述
Full - Bridge NPT IGBT Power Module

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中文翻译

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数据手册

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APTGF75H120TG_10 数据手册

APTGF75H120TG

V_CES= 1200V

I_C= 75A @ Tc = 80°C

Full - Bridge

NPT IGBT Power Module

Application

•

Welding converters

VBUS

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Non Punch Through (NPT) Fast IGBT

OUT1

OUT2

Low voltage drop

Low tail current

Switching frequency up to 50 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Very low stray inductance

NTC1

NTC2

0/VBUS

Symmetrical design

Lead frames for power connections

•

Internal thermistor for temperature monitoring

High level of integration

Benefits

•

Outstanding performance at high frequency

operation

OUT2

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

OUT1

VBUS

0/VBUS

NTC2

NTC1

•

Easy paralleling due to positive T_Cof V_CEsat

Low profile

RoHS compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

100

150

±20

500

T_c= 25°C

T_c= 80°C

T_c= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_c= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 150°C 150A @ 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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