型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT6013B2LLG | MICROSEMI |
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Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Met | |
APT6013JFLL | MICROSEMI |
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Power Field-Effect Transistor, 39A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Met | |
APT6013JFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6013JFLL_04 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6013JLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6013JLL | MICROSEMI |
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Power Field-Effect Transistor, 39A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Met | |
APT6013JLL_04 | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6013JVR | MICROSEMI |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT6013JVR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT6013LFLL | ADPOW |
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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |