APT6015B2VR

更新时间： 2024-11-05 22:33:59

品牌	Logo	应用领域
ADPOW		高压
页数	文件大小	规格书
4页	64K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT6015B2VR 数据手册

APT6015B2VR

600V 38A 0.150Ω

POWER MOS V^®

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• New T-MAX™ Package

(Clip-mounted TO-247 Package)

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT6015B2VR

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

152

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±30

±40

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

Watts

520

P_D

W/°C

4.16

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

2500

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV_DSS

I_D(on)

Characteristic / Test Conditions

MIN

600

TYP

MAX

UNIT

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

Volts

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

Amps

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

0.150

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

µA

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

250

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 557 92 15 15

FAX: (541) 388-0364

FAX: (33) 5 56 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

12 3 4

中文翻译

下载PDF

与APT6015B2VR相关器件

型号	品牌	获取价格	描述	数据表
APT6015EN	ADPOW	获取价格	Transistor
APT6015JFVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6015JN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT6015JVFR	ADPOW	获取价格	POWER MOS V FREDFET
APT6015JVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6015LVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6015LVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
APT6015LVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6015LVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 38A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
APT6017AFN	ETC	获取价格	TRANSISTOR \| MOSFET POWER MODULE \| INDEPENDENT \| 600V V(BR)DSS \| 39A I(D)

与APT6015B2VR相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

APT6015B2VR

APT6015B2VR 数据手册

与APT6015B2VR相关器件

与APT6015B2VR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APT6015B2VR

APT6015B2VR 数据手册

与APT6015B2VR相关器件

与APT6015B2VR相关文章

您还可以找

您在本页遇到什么问题？