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APT100GLQ65JU3-Module PDF预览

APT100GLQ65JU3-Module

更新时间: 2024-11-26 14:54:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 双极性晶体管
页数 文件大小 规格书
6页 390K
描述
IGBT 3 fastLow voltage dropLow leakage currentLow switching lossesKelvin emitter for easy driveLow

APT100GLQ65JU3-Module 数据手册

 浏览型号APT100GLQ65JU3-Module的Datasheet PDF文件第2页浏览型号APT100GLQ65JU3-Module的Datasheet PDF文件第3页浏览型号APT100GLQ65JU3-Module的Datasheet PDF文件第4页浏览型号APT100GLQ65JU3-Module的Datasheet PDF文件第5页浏览型号APT100GLQ65JU3-Module的Datasheet PDF文件第6页 
APT100GLQ65JU3  
ISOTOP® buck chopper  
High speed Trench + Field  
Stop IGBT4 Power Module  
VCES = 650V  
IC = 100A* @ Tc = 80°C  
Application  
C
AC and DC motor control  
Switched Mode Power Supplies  
Features  
G
High speed Trench + Field Stop IGBT 4  
-
-
-
Low voltage drop  
Low leakage current  
Low switching losses  
E
ISOTOP® Package (SOT-227)  
Very low stray inductance  
Benefits  
A
Low conduction losses  
Stable temperature behavior  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
A
E
C
G
ISOTOP®  
All ratings @ Tj = 25°C unless otherwise specified  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
650  
Unit  
V
VCES  
Collector - Emitter Voltage  
TC = 25°C  
TC = 80°C  
TC = 25°C  
165*  
100*  
270  
±20  
430  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Power Dissipation  
V
W
* Specification of IGBT device but output current must be limited due to size of output pins.  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
1 - 6  
www.microsemi.com  

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