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AP9962H PDF预览

AP9962H

更新时间: 2024-11-18 03:19:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 76K
描述
N-CHANNEL ENHANCEMENT MODE

AP9962H 数据手册

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AP9962H/J  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Low On-resistance  
BVDSS  
RDS(ON)  
ID  
40V  
20mΩ  
32A  
D
S
Single Drive Requirement  
Surface Mount Package  
G
Description  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
G
D
TO-252(H)  
S
The TO-252 package is universally preferred for all commercial-  
industrial surface mount applications and suited for low voltage  
applications such as DC/DC converters. The through-hole version  
(AP9962J) are available for low-profile applications.  
G
D
TO-251(J)  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
40  
Units  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
±20  
32  
Continuous Drain Current, VGS @ 10V  
ID@TA=25  
ID@TA=100℃  
IDM  
A
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
20  
150  
A
A
PD@TA=25℃  
Total Power Dissipation  
34.7  
W
Linear Derating Factor  
0.27  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
Unit  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
4.5  
Rthj-a  
110  
Data and specifications subject to change without notice  
201028031  

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