AP9965GYT-HF

更新时间： 2024-11-18 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	65K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP9965GYT-HF 数据手册

AP9965GYT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

40V

21mΩ

10A

▼ Small Size & Lower Profile

▼ RoHS Compliant & Halogen-Free

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

The PMPAK^®3 x 3 package is special for DC-DC converters application

and lower 1.0mm profile with backside heat sink.

PMPAK^®3 x 3

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

+16

Gate-Source Voltage

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.57

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

Data and specifications subject to change without notice

201112231

12 3 4

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