AP9967GM-HF

更新时间： 2024-09-15 12:52:15

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	56K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP9967GM-HF 数据手册

AP9967GM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

40V

11.5mΩ

11A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

SO-8

Description

AP9967 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

The SO-8 package is widely preferred for all commercial-industrial surface

mount applications using infrared reflow technique and suited for voltage

conversion or switch applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

8.8

P_D@T_A=25℃

T_STG

Total Power Dissipation

2.5

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201211051

12 3 4

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