Datasheet > AP9962M

AP9962M

更新时间： 2024-09-14 22:05:47

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描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP9962M 数据手册

AP9962M

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Low On-resistance

BV_DSS

R_DS(ON)

I_D

40V

25mΩ

▼ Single Drive Requirement

▼ Surface Mount Package

SO-8

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current^1,2

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

5.5

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.016

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

℃

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200407031

12 3 4

中文翻译

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