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AP9970GK-HF PDF预览

AP9970GK-HF

更新时间: 2024-11-18 12:52:15
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
4页 64K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9970GK-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantHTS代码:8541.29.00.95
风险等级:5.66Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):30 A表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP9970GK-HF 数据手册

 浏览型号AP9970GK-HF的Datasheet PDF文件第2页浏览型号AP9970GK-HF的Datasheet PDF文件第3页浏览型号AP9970GK-HF的Datasheet PDF文件第4页 
AP9970GK-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
60V  
50mΩ  
5.8A  
D
Lower Gate Charge  
S
Fast Switching Characteristic  
D
RoHS Compliant & Halogen-Free  
SOT-223  
G
Description  
D
S
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, low on-resistance and cost-  
effectiveness.  
G
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
5.8  
A
4.6  
A
30  
A
PD@TA=25℃  
Total Power Dissipation  
2.8  
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
45  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201204252  

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