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AP9577GI PDF预览

AP9577GI

更新时间: 2024-10-28 12:26:39
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 101K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9577GI 数据手册

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AP9577GI  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
Lower Gate Charge  
BVDSS  
RDS(ON)  
ID  
-60V  
64mΩ  
-17A  
Simple Drive Requirement  
Fast Switching Characteristic  
RoHS Compliant  
G
S
Description  
AP9577 series are from Advanced Power innovated design and silicon  
process technology to achieve the lowest possible on-resistance and fast  
switching performance. It provides the designer with an extreme efficient  
device for use in a wide range of power applications.  
G
D
TO-220CFM(I)  
S
The TO-220CFM package is widely preferred for all commercial-  
industrial through hole applications. The mold compound provides a  
high isolation voltage capability and low thermal resistance between the  
tab and the external heat-sink.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
-17  
V
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current1  
ID@TC=25  
ID@TC=100℃  
IDM  
A
-11  
A
-85  
A
PD@TC=25℃  
PD@TA=25℃  
TSTG  
Total Power Dissipation  
31.3  
1.92  
W
W
Total Power Dissipation  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maximum Thermal Resistance, Junction-ambient  
4
Rthj-a  
65  
Data and specifications subject to change without notice  
1
201203122  

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