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AP9579GM-HF PDF预览

AP9579GM-HF

更新时间: 2024-10-28 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
4页 64K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9579GM-HF 数据手册

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AP9579GM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
-60V  
25mΩ  
-7.3A  
D
D
D
Lower Gate Charge  
D
Fast Switching Characteristic  
G
S
RoHS Compliant & Halogen-Free  
S
S
SO-8  
D
S
Description  
Advanced Power MOSFETs from APEC provide the designer with the  
best combination of fast switching, ruggedized device design, low on-  
resistance and cost-effectiveness.  
G
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications such  
as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
-60  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current3, VGS @ 10V  
Continuous Drain Current3, VGS @ 10V  
Pulsed Drain Current1  
ID@TA=25  
ID@TA=70℃  
IDM  
-7.3  
A
-5.8  
A
-30  
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.5  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201110261  

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